Centrotherm international AG

Rapid Thermal Processing system for silicon and compound semiconductors

The stand-alone RTP system c.RAPID 200 has been especially developed for multiple process requirements in R&D and production lines. High performance and flexibility combined with low cost of ownership make it the best choice in rapid thermal processing.

The capability to run a substrate on a susceptor or within a box in combination with atmospheric or vacuum operation enables a wide range of possible applications for compound semiconductors (e.g. for SiC or GaN).

Its wafer surface-independent temperature controllability is unique among all existing RTP solutions. The pyrometer-based temperature measurement system enables processes at low and high temperatures. Independent lamp control combined with predictive PID control provides excellent thermal accuracy and repeatability.

c.RAPID 200 operates with a fully automatic loading system and is available as single or dual chamber version and with up to 4 cassette stations.