Electronics and Innovation, LTD

RF Power Amplifiers

RF Power Amplifiers

• Class A, AB, D/S Linearity
• Instantaneous Bandwidth
• Solid State Reliability
• Unconditional RF Stability
• CE Mark & RoHS Compliant

Class A Performance

We have incorporated the design rules and thermal guidelines from the trusted ENI line of amplifiers, and have since updated the designs; incorporating modern technology and state of the art LDMoS devices. These designs enable our amplifiers to work at high power levels, into all loads, without the risk of failure; while still providing a true and faithful reproduction of the input signal.

Ruggedness

E&I’s line of broadband RF power amplifiers are built to withstand any VSWR condition. The internal switched mode power supply is very conservatively rated, to facilitate operation over a large range of line conditions and temperatures. The forced air cooling provides for low internal temperatures; providing long term reliability. The RF power is delivered by rugged Dmos FETs, de-rated to provide excellent MTBF figures.

Reliability

The majority of electronic equipment failures are due to thermo-mechanical stress. E&I designs mitigate this failure mechanism by ensuring that component mounting and placement allow for thermal cycling without stressing leads or connections. Our thermal design rules dictate that all components run at a maximum of 60% of their rated value. The Mos Fets used in the RF chain are all operated at below 40% of their rated voltage breakdown.

Flexibility

E&I amplifiers accurately reproduce all waveforms within their power and frequency ranges: AM. FM, SSB, pulsed and other complex modulation schemes. They are compatible with most signal generators, frequency synthesizers, sweep generators and other laboratory signal sources. Operation over the band is achieved without the need for any band switching or indeed any adjustments.