Mitsubishi Electric Develops Ultra-Wideband Digitally Controlled GaN Amplifier for Mobile Base Stations

10 January 2019

Mitsubishi Electric Corporation announced today its development of the world's first*ultra-wideband digitally controlled gallium nitride (GaN) amplifier, which is compatible with a world-leading range of sub-6GHz bands focused on fifth-generation (5G) mobile communication systems. With a power efficiency** rating of above 40%, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations.

Key Features
1) Novel load modulation achieves wideband operation and contributes to large-capacity communication
 Mitsubishi Electric's novel ultra-wideband digitally controlled GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier's high-efficiency operation, for wideband (1.4-4.8GHz) operation.
Wide-band operation of amplifier supports several frequency bands.
2)Digital control realizes high-efficiency operation and reduces power consumption of mobile base stations
Digitally controlled input signals for amplifier realize high-efficiency load modulation of above 40% over 110% of the fractional bandwidth. Digital control employs learning function based on Maisart®***.
Improved efficiency of amplifier helps to reduce power consumption in mobile base stations.
Mitsubishi Electric's AI creates the State-of-the- ART in technologyMaisart

Media Contact
Public Relations Division
Mitsubishi Electric Corporation